A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

Near-field cathodoluminescence studies on n-doped gallium nitride films

Dilute nitride and GaAs n-i-p-i solar cells

We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal annealing treatment and fabrication into circu...

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4 eV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of ...

Strongly Localized Donor Level in Oxygen Doped Gallium Nitride

A classification in terms of the localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of the free carrier concentration in highly O doped GaN epitaxial films at a hydrostatic pressure of 22 GPa. This indicates the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon c...

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the...